Inchange Semiconductor Product Specification 2SD1236L Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters, converters,and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current-peak 9 A PC Collector dissipation TC=25℃ 30 W 1.75 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1236L Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 90 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=3A; IB=0.3A 0.4 V ICBO Collector cut-off current VCB=80V; IE=0 100 μA IEBO Emitter cut-off current VEB=4V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=3A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 20 MHz 0.1 μs 1.2 μs 0.4 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=10IB1=-10IB2=2A VCC=50V,RL=25Ω hFE-1 Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1236L Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification 2SD1236L Silicon NPN Power Transistors 4