isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching APPLICATIONS ·High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A Collector Power Dissipation @ Ta=25℃ 2 W PC TJ Tstg Collector Power Dissipation @ TC=25℃ 35 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1336 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1336 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA 2.5 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 100 μA hFE DC Current Gain IC= 5A; VCE= 4V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz fT CONDITIONS MIN TYP. B B MAX UNIT 1500 20 MHz 0.7 μs 4.0 μs 1.5 μs Switching times ton Turn-on Time tstg Storage Time tf IC= 5A, IB1= -IB2= 12.5mA; VCC= 50V Fall Time isc Website：www.iscsemi.cn 2