Inchange Semiconductor Product Specification 2SD1452 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V 2.5 A 50 W VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector IC Collector current (DC) PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1452 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 5.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 0.5 mA hFE DC current gain IC=0.3A ; VCE=5V VF Diode forward voltage IF=2.5A 2.2 V 2 6 UNIT V 6 Inchange Semiconductor Product Specification 2SD1452 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3