isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1563 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A Total Power Dissipation @ TC=25℃ 10 Total Power Dissipation @ Ta=25℃ 1.2 Junction Temperature 150 W PC TJ Tstg Storage Temperature Range isc Website：www.iscsemi.cn -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1563 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 μA hFE DC Current Gain IC= 0.1A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 80 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 20 pF fT COB CONDITIONS B TYP. B B hFE Classifications N P Q R 56-120 82-180 120-270 180-390 isc Website：www.iscsemi.cn MIN 2 56 MAX UNIT 390