HGTP14N40F3VL / HGT1S14N40F3VLS 330mJ, 400V, N-Channel Ignition IGBT General Description Applications This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications Features • • • • • Formerly Developmental Type 49023 Package Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection Max TJ = 175oC SCIS Energy = 330mJ at TJ = 25oC Symbol JEDEC TO-263AB D² -Pak COLLECTOR JEDEC TO-220AB E C G R1 GATE G E COLLECTOR (FLANGE) COLLECTOR (FLANGE) EMITTER Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCES Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 420 Units V BVCGR Collector to Gate Breakdown Voltage (RGE = 10KΩ) 420 V ESCIS25 Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C 330 mJ A IC25 Collector Current Continuous, at TC = 25°C, VGE = 4.5V 38 IC90 Collector Current Continuous, at TC = 90°C, VGE = 4.5V 35 A VGES Gate to Emitter Voltage Continuous ±10 V VGEM Gate to Emitter Voltage Pulsed ±12 V 17 A ICO L = 2.3mHy, TC = 25°C ICO L = 2.3mHy, TC = 150°C 12 A PD Power Dissipation Total TC = 25°C 262 W 1.75 W/°C Power Dissipation Derating TC > 25°C TJ, TSTG -40 to 175 °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 6 KV TL Operating and Storage Junction Temperature Range ©2002 Fairchild Semiconductor Corporation HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS January 2002 Device Marking 14N40FVL Device HGT1S14N40F3VLT Package TO-263AB Reel Size 24mm Tape Width 24mm Quantity 800 units 14N40FVL HGT1S14N40F3VLS TO-263AB Tube N/A 50 units 14N40FVL HGTP14N40F3VL TO-220AB Tube N/A 50 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0 TC = 150°C 345 370 415 V TC = 25°C 350 375 420 V TC = -40°C 355 380 425 V IC = 10A, RG = 0 TC = 150°C 350 385 430 V Emitter to Collector Breakdown Voltage IC = 1mA TC = 25°C V Gate to Emitter Breakdown Voltage IGES = ±1mA ICES Collector to Emitter Leakage Current VCE = 250V, IGES Gate to Emitter Leakage Current VGE = ±10V BVCE(CL) Collector to Emitter Clamp Breakdown Voltage BVECS BVGES R1 TC = 25°C 24 - - ±12 - - V - - 50 µA TC = 150°C - - 250 µA TC = 25°C - - ±10 µA - 1000 - Ω V Series Gate Resistance On State Characteristics VCE(SAT) VGE(TH) Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage IC = 10A, VGE = 4.5V TC = 25°C - 1.3 2.0 TC = 150°C - 1.4 2.3 V IC = 1mA, VCE = VGE TC = 25°C 1.0 - 2.0 V TC = 150°C 0.5 - - V - 12 16 µs 17 - - A 12 - - A 0.57 °C/W Switching Characteristics td(OFF)l + tf(OFF)l SCIS Current Turn-Off Time-Inductive Load IC = 6.5A, RG = 25Ω, L = 550µHy, VCL = 320V, VGE = 5V, TC = 25°C Self Clamped Inductive Switching L = 2.3mHy, TC = 25°C VGE = 5V, See T = 150°C C Fig. 1 & 2 Thermal Characteristics RθJC Thermal Resistance Junction to Case ©2002 Fairchild Semiconductor Corporation - - HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 80 RG = 1kΩ, VGE = 5V, VDD = 14V 60 40 TJ = 25°C TJ = 150°C 20 SCIS Curves valid for Vclamp Voltages of <430V 0 80 RG = 1kΩ, VGE = 5V, VDD = 14V 60 40 TJ = 25°C 20 TJ = 150°C SCIS Curves valid for Vclamp Voltages of <430V 0 0 20 40 60 80 100 120 140 160 180 200 0 2 4 tCLP, TIME IN CLAMP (µS) ICE = 6A 1.20 VGE = 3.7V VGE = 4.0V 1.10 VGE = 8.0V 1.05 VGE = 4.5V 1.00 VGE = 5.0V 0.95 -25 0 25 50 75 100 125 150 175 1.45 VGE = 4.0V 1.35 VGE = 4.5V 1.30 VGE = 5.0V 1.25 1.20 VGE = 8.0V 1.15 1.10 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 20 10 TJ = - 40°C Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) ICE = 10A VGE = 3.7V 1.40 TJ, JUNCTION TEMPERATURE (°C) 30 10 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.25 0.90 -50 8 L, INDUCTANCE (mHy) Figure 1. Self Clamped Inductive Switching Current vs Time 1.15 6 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 10 TJ = 25°C 0 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter Current vs Collector to Emitter On-State Voltage ©2002 Fairchild Semiconductor Corporation 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter Current vs Collector to Emitter On-State Voltage HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS Typical Performance Curves (Continued) 30 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 10 TJ = 175°C 0 0 1.0 2.0 3.0 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 25 20 15 TJ = 25°C 10 TJ = 175°C 5 TJ = -40°C 0 4.0 1.0 2.0 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 2.5 4.0 3.5 Figure 7. Collector to Emitter Current vs Collector to Emitter On-State Voltage Figure 8. Transfer Characteristics 40 2.2 VCE = VGE ICE = 1mA VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) VGE = 4.5V 30 20 10 0 25 50 75 100 125 150 4.5 VGE, GATE TO EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 175 -50 -25 TC CASE TEMPERATURE (°C) 0 25 50 75 100 125 150 175 TJ JUNCTION TEMPERATURE (°C) Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature 14 10000 VECS = 24V 1000 toffL, SWITCHING TIME (µS) ICES, LEAKAGE CURRENT (µA) ICE = 6.5A, VGE = 5V, RG = 1KΩ 100 VCES = 350V 10 VCES = 250V 12 Inductive tOFF 10 8 1.0 6 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Leakage Current vs Junction Temperature ©2002 Fairchild Semiconductor Corporation 175 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Switching Time vs Junction Temperature HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS Typical Performance Curves (Continued) 8 1500 IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C VGE, GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1 MHz C, CAPACITANCE (pF) 1250 CIES 1000 750 500 CRES 250 COES 6 VCE = 12V 4 2 VCE = 6V 0 0 0 5 10 15 20 25 0 5 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 15 20 25 30 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 380 BVCER, BREAKDOWN VOLTAGE (V) ICER = 10mA 375 TJ = - 40°C 370 TJ = 25°C 365 TJ = 175°C 360 355 10 1000 100 5000 10000 RG, SERIES GATE RESISTANCE (kΩ) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 PD 0.01 t2 10-2 SINGLE PULSE 10-3 10-5 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-4 10-3 10-2 10-1 100 T1, RECTANGULAR PULSE DURATION (s) Figure 16. Normalized Transient Thermal Impedance ©2002 Fairchild Semiconductor Corporation HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS Test Circuit and Waveforms VCE R or L C PULSE GEN LOAD C RG RG DUT G + DUT G VCE - 5V E E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit VCE BVCES / R tP VCE L IAS C VDD VARY tP TO OBTAIN REQUIRED PEAK IAS VGE + RG G VDD DUT - E tP 0V IAS 0 0.01Ω tAV Figure 19. Unclamped Energy Test Circuit ©2002 Fairchild Semiconductor Corporation Figure 20. Unclamped Energy Waveforms HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS L TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4