Inchange Semiconductor Product Specification 2SD1571 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching ・High voltage:VCBO=800V(Min) APPLICATIONS ・High voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1571 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 1.0 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=50mA 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=10mA ; VCE=5V 8 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 fT Transition frequency IE=-0.1A ; VCE=10V 4 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 75 pF Fall time IC=0.5A; IB1=-IB2=50mA VCC=200V; RL=400Ω tf CONDITIONS 2 MIN TYP. MAX 400 UNIT V 1.0 μs Inchange Semiconductor Product Specification 2SD1571 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3