Inchange Semiconductor Product Specification 2SD1563A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SB1086A ・Wide area of safe operation ・High breakdown voltage :BVCEO=160V(min) APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A PC Collector power dissipation TC=25℃ 10 W Ta=25℃ 1.2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1563A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage V(BR)CBO MIN TYP. MAX UNIT 160 V IE=50μA ;IC=0 5 V Collector-base breakdown voltage IC=50μA ;IE=0 160 V VCEsat Collector-emitter saturation voltage IC=1.0A ;IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1.0A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 μA hFE DC current gain IC=0.1A ; VCE=5V fT Transition frequency IC=0.1A ; VCE=5V 80 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 20 pF hFE Classifications N P Q 56-120 82-180 120-270 2 56 270 Inchange Semiconductor Product Specification 2SD1563A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3