Inchange Semiconductor Product Specification 2SD1589 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1098 ・Low speed switching APPLICATIONS ・Low frequency power amplifier ・Low speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 150 VCEO Collector-emitter voltage Open base 100 VEBO Emitter-base voltage Open collector IC V 7 V Collector current (DC) 5 A ICM Collector current-Peak 8 A IB Base current (DC) 0.5 A PC Collector power dissipation Ta=25℃ 1.5 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1589 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 60 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=3mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=3mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 1 μA hFE-1 DC current gain IC=3A ; VCE=2V 2000 hFE-2 DC current gain IC=5A ; VCE=2V 500 15000 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A ;IB1=3mA IB2=-3mA; VCC≈50V RL=16.7Ω hFE Classifications R O Y 2000-5000 3000-7000 5000-15000 2 1.0 μs 3.5 μs 1.2 μs Inchange Semiconductor Product Specification 2SD1589 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3