Inchange Semiconductor Product Specification 2SD1535 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector -emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 12 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 0.5 A PC Collector power dissipation TC=25℃ 50 Ta=25℃ 2.0 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1535 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBZ=∞,L=25mH VCEsat Collector-emitter saturation voltage IC=7A ; IB=70mA 2.0 V VBEsat Base-emitter saturation voltage IC=7A ; IB=70mA 2.5 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA ICEO Collector cut-off current VCE=400V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=12V; IC=0 100 mA hFE-1 DC current gain IC=2A ; VCE=2V 500 hFE-2 DC current gain IC=6A ; VCE=2V 200 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V 20 MHz 1.5 μs 5.0 μs 6.5 μs Switching times ton Turn-on time tstg Storage time tf IC=7A ; IB1=-IB2=70mA VCC=300V Fall time 2 Inchange Semiconductor Product Specification 2SD1535 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3