Inchange Semiconductor Product Specification 2SD1765 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation TC=25℃ 20 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1765 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50μA; IC=0 100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=1mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=1A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 2 1000 10000 25 pF Inchange Semiconductor Product Specification 2SD1765 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3