ISC 2SD1788

Inchange Semiconductor
Product Specification
2SD1788
Silicon NPN Power Transistors
DESCRIPTION
・With ITO-220 package
・Switching power transistor
・DARLINGTON
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
±4
A
ICM
Collector current-Peak
±6
A
IB
Base current
0.3
A
IBM
Base current-Peak
0.5
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
5.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SD1788
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=1A; IB=2mA
1.5
V
Base-emitter saturation voltage
IC=1A; IB=2mA
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=100V; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5
mA
hFE
DC current gain
IC=1A ; VCE=3V
Transition frequency
IC=0.4A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
1500
30000
20
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A;IB1=IB2=2mA,
RL=25Ω;VBB2=4V
2
2.0
μs
12
μs
5.0
μs
Inchange Semiconductor
Product Specification
2SD1788
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3