ISC 2SD1712

Inchange Semiconductor
Product Specification
2SD1712
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SB1157
·High transition frequency fT
·Satisfactory linearity of hFE
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICP
Collector current-peak
8
A
PC
Collector power dissipation
TC=25℃
60
Ta=25℃
3
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1712
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
‹
CONDITIONS
MAX
UNIT
IC=3A ;IB=0.3A
2.0
V
Base-emitter on voltage
IC=3A ; VCE=5V
1.8
V
ICBO
Collector cut-off current
VCB=100V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
μA
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE -2
DC current gain
IC=1A ; VCE=5V
60
hFE -3
DC current gain
IC=3A ; VCE=5V
20
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
70
pF
fT
Transition frequency
IC=0.5A ; VCE=5V
20
MHz
hFE-2 classifications
Q
S
P
60-120
80-60
100-200
2
MIN
TYP.
200
Inchange Semiconductor
Product Specification
2SD1712
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3