isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1833 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 10 A Collector Power Dissipation @ Ta=25℃ 1.5 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1833 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT COB CONDITIONS B E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn TYP. B B hFE Classifications D MIN 2 60 MAX UNIT 320 5 MHz 150 pF