Inchange Semiconductor Product Specification 2SD1855 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB1335 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V 4 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1855 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=50μA; IE=0 80 V V(BR)EBO Collector-emitter breakdown voltage IE=50μA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.5A; VCE=5V 8 MHz Collector output capacitance f=1MHz ; VCB=10V 90 pF fT COB CONDITIONS hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 Inchange Semiconductor Product Specification 2SD1855 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3