Inchange Semiconductor Product Specification 2SD1985 2SD1985A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD1985 VCBO Collector-base voltage 60 Open base 2SD1985A VEBO Emitter-base voltage IC V 80 2SD1985 Collector-emitter voltage UNIT 60 Open emitter 2SD1985A VCEO VALUE V 80 Open collector 6 V Collector current (DC) 3 A ICM Collector current-peak 5 A PC Collector power dissipation TC=25℃ 25 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1985 2SD1985A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1985 MIN TYP. MAX UNIT 60 IC=30mA , IB=0 2SD1985A V 80 Collector-emitter saturation voltage IC=3A;IB=0.375A 1.2 V VBE Base-emitter voltage VCE=4V;IC=3A 1.8 V ICES Collector cut-off current 200 μA 300 μA 1 mA ICEO Collector cut-off current 2SD1985 VCE=60V;IB=0 2SD1985A VCE=80V;IB=0 2SD1985 VCE=30V;IB=0 2SD1985A VCE=60V;IB=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 70 hFE-2 DC current gain IC=3A ; VCE=4V 10 Transition frequency IC=0.5A; VCE=5V;f=10MHz fT 250 30 MHz 0.5 μs 2.5 μs 0.4 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=1A ;IB1=0.1A IB2=-0.1A;VCC=50V hFE-1 Classifications Q P 70-150 120-250 2 Inchange Semiconductor Product Specification 2SD1985 2SD1985A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD1985 2SD1985A Silicon NPN Power Transistors 4