ISC 2SD1958

Inchange Semiconductor
Product Specification
2SD1958
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·TV horizontal deflection output
·High-current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
4.5
A
ICM
Collector current-peak
10
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1958
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
200
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE=∞
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A ; IB=0.4A
VBEsat
Base-emitter saturation voltage
ICBO
1.0
V
IC=4A ; IB=0.4A
1.5
V
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V;IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
30
hFE-2
DC current gain
IC=4A ; VCE=5V
25
fT
Transition frequency
IC=1A ; VCE=5V
10
tf
Fall time
VCC=50V;IC=5A;IB1=-IB2=500mA
0.2
2
0.5
160
MHz
0.5
μs
Inchange Semiconductor
Product Specification
2SD1958
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SD1958
Silicon NPN Power Transistors
4