isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2047 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Speed Switching APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse 10 A IB Base Current- Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.55 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2047 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 700 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.5 V VCB= 750V ; IE= 0 50 μA VCB= 1500V ; IE= 0 1.0 mA ICBO hFE CONDITIONS MIN TYP. MAX UNIT Collector Cutoff Current DC Current Gain IC= 1A ; VCE= 5V 18 50 Switching Times ton Turn-on Time tstg Storage Time tf IC= 2.5A, IB1= 0.25A; IB2= -0.5A Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 0.5 μs