Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1381 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 0.5 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=20mA 2.5 V Base-emitter saturation voltage IC=3A ;IB=6mA 2.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 2.5 mA hFE-1 DC current gain IC=3A ; VCE=3V 2000 hFE-2 DC current gain IC=5A ; VCE=3V 1000 VBEsat CONDITIONS MIN TYP. MAX 100 UNIT V 15000 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=6mA VCC≈30V ,RL=10Ω 2 1.0 μs 4.0 μs 2.5 μs Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3