isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·High DC Current Gain: hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) B APPLICATIONS ·Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD2558 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2558 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 5mA 1.5 V ICBO Collector Cutoff current VCB= 200V, IE= 0 0.1 mA IEBO Emitter Cutoff current VEB= 6V, IC= 0 5.0 mA hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 110 pF Current-Gain—Bandwidth Product IE= -0.5A; VCE= 10V 15 MHz fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 200 UNIT V 1500 6500