isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2524 DESCRIPTION ·High Breakdown Voltage：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 20 A IBM Base Current-Peak 5 A Collector Power Dissipation @ TC=25℃ 100 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2524 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 2A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 2A 1.5 V VCB= 1000V; IE= 0 50 μA VCB= 1700V; IE= 0 1.0 mA ICBO V B B Collector Cutoff Current hFE DC Current Gain IC= 6A; VCE= 5V VECF C-E Diode Forward Voltage IF= 8A Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V fT 5 UNIT 4 10 2.0 3 V MHz Resistive Load ts Storage Time 12 μs 0.8 μs IC= 6A, IB(end)= 2A, Lleak= 5μH tf Fall Time isc Website：www.iscsemi.cn 2