ISC 2SD5071

Inchange Semiconductor
Product Specification
2SD5071
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PML package
・High speed
・High breakdown voltage
・Built-in damper diode
APPLICATIONS
・Color TV horizontal output application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3.5
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
1
Inchange Semiconductor
Product Specification
2SD5071
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=2.5 A;IB=0.8A
8.0
V
Base-emitter saturation voltage
IC=2.5 A;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
200
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
8
fT
Transition frequency
IC=0.5A ; VCE=10V
VF
Diode forward voltage
IF=3.5A
2.0
V
Fall time
IC=3A;RL=66.7Ω;VCC=200V
IB1=0.8A;IB2=-1.6A
0.4
μs
tf
CONDITIONS
2
MIN
TYP.
3
MHz
Inchange Semiconductor
Product Specification
2SD5071
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3