Inchange Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 1 A PC Collector power dissipation B TC=25℃ 40 Ta=25℃ 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 0.9 1.2 V ICBO Collector cut-off current VCB=70V; IE=0 30 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=4A ; VCE=1V 30 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF fT Transition frequency IC=1A ; VCE=4V 10 MHz 0.2 μs 2.5 μs 0.5 μs 50 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IB1=- IB2=0.3A RL=10Ω; VCC=30V hFE-1Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors 4