ISC 2SD641

Inchange Semiconductor
Product Specification
2SD641
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
ICM
Collector current-Peak
30
A
IB
Base current
6
A
PT
Total power dissipation
150
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
Inchange Semiconductor
Product Specification
2SD641
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=2A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2A
2.0
V
ICBO
Collector cut-off current
VCB=500V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=10V
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
COB
CONDITIONS
2
MIN
TYP.
20
MAX
UNIT
140
4
MHz
150
pF
Inchange Semiconductor
Product Specification
2SD641
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3