Inchange Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SB776 ·Wide area of safe operation APPLICATIONS ·100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICM Collector current-peak 11 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 100 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V Collector-emitter saturation voltage IC=4A ;IB=0.4A VBE Base-emitter on voltage ICBO VCEsat CONDITIONS MIN TYP. UNIT 2.0 V IC=1A;VCE=5V 1.5 V Collector cut-off current VCB=80V IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=4A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V 15 MHz Collector output capacitance f=1MHz;VCB=10V 140 pF 0.2 μs 6.0 μs 0.6 μs fT COB 0.6 MAX B 200 Switching times ton Turn-on time tstg Storage time tf IC=1.0A; IB1=-IB2=0.1A RL=20Ω;VCC=20V Fall time hFE-1 Classifications D E 60-120 100-200 2 Inchange Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors 4