Inchange Semiconductor Product Specification 2SD951 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Built-in damper diode ・High voltage capability APPLICATIONS ・Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 5 V IC Collector current 3 A ICM Collector current-peak 5 A PT Total power dissipation 65 W Tj Junction temperature 130 ℃ Tstg Storage temperature -65~130 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD951 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500m A;IC=0 VCEsat Collector-emitter saturation voltage IC=2 .5A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=2 .5A;IB=0.8 A 1.5 V VCB=750V;IE=0 50 μA VCB=1500V;IE=0 1.0 mA ICBO 5 UNIT Collector cut-off current hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=2.5A ; VCE=10V 3 Diode forward voltage IF=4A VF tf V 1.7 Fall time V 0.9 μs IC=2.5A;IBend=0.8A;LB=5μH ts Storage time 11 2 μs Inchange Semiconductor Product Specification 2SD951 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3