isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD226/228/230 DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/231 APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCER VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage(RBE= 1kΩ) VALUE BD226 45 BD228 60 BD230 100 BD226 45 BD228 60 BD230 80 BD226 45 BD228 60 BD230 100 Emitter-Base Voltage UNIT V V V 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A PC Collector Power Dissipation @ TC≤62℃ 12.5 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 7 ℃/W 100 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD226/228/230 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD226 VCEO(SUS) Collector-Emitter Sustaining Voltage BD228 MIN TYP. MAX UNIT 45 IC= 100mA ; IB= 0 V 60 80 BD230 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.8 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V 1.3 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 VCB= 30V; IE= 0,TC=125℃ 0.1 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 5mA ; VCE= 2V 25 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 25 hFE-3 DC Current Gain IC= 0.15A ; VCE= 2V 40 Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V fT isc Website：www.iscsemi.cn B 2 250 125 MHz