ISC BD683

Inchange Semiconductor
Product Specification
BD683
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type BD684
・DARLINGTON
APPLICATIONS
・For audio and video applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter -base voltage
Open collector
5
V
IC
Collector current (DC)
4
A
ICM
Collector current-Peak
6
A
IBM
Base current-Peak
0.1
A
PT
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.12
K/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance, junction to mouting base
Inchange Semiconductor
Product Specification
BD683
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
MAX
UNIT
IC=1.5A; IB=6mA
2.5
V
Base-emitter on voltage
IC=1.5A ; VCE=3V
2.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
0.2
mA
ICEO
Collector cut-off current
VCE=60V; IB=0
0.2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
mA
hFE-1
DC current gain
IC=500mA ; VCE=3V
hFE-2
DC current gain
IC=1.5A ; VCE=3V
hFE-3
DC current gain
IC=4A ; VCE=3V
0.8
2
μs
4.5
8
μs
ton
Turn-on time
toff
Turn-off time
CONDITIONS
IC=1.5A;IB1=-IB2=6mA
VCC=30V
2
MIN
TYP.
2200
750
1500
Inchange Semiconductor
Product Specification
BD683
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3