isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD750B/750C APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER VALUE BD751B 110 BD751C 140 BD751B 100 BD751C 130 Collector-Emitter Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD751B/751C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS BD751B VBE(sat) ICEV Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT TYP. MAX BD751B UNIT 100 IC=100mA ; IB=0 V 130 BD751C VCE(sat) MIN IC= 7.5A; IB= 0.75A 1.5 V BD751C IC= 5A; IB= 0.5A 1.0 BD751B IC= 7.5A; IB= 0.75A 1.8 BD751C IC= 5A; IB= 0.5A 1.8 BD751B VCEV= 110V;VBE(off)= 1.5V 0.5 BD751C VCEV= 140V;VBE(off)= 1.5V 0.5 VEB= 7V; IC=0 1.0 B V B mA BD751B IC= 7.5A ; VCE= 2V 15 60 BD751C IC= 5A ; VCE= 2V 25 100 IC= 0.5A ;VCE= 10V; ftest= 1MHz 4 Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn 2 mA MHz