Inchange Semiconductor Product Specification BD895/897/899/901 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD896/898/900/902 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BD895 Collector-base voltage 60 Open emitter 80 BD901 100 BD895 45 Collector-emitter voltage VEBO Emitter-base voltage IC Collector current-DC IB Base current PT Total power dissipation V BD899 BD897 VCEO UNIT 45 BD897 VCBO VALUE 60 Open base V BD899 80 BD901 100 Open collector 5 V 8 A 300 mA TC=25℃ 70 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BD895/897/899/901 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD895 V(BR)CEO VCEsat VBE Collector-emitter breakdown voltage MAX UNIT 60 IC=100mA, IB=0 V BD899 80 BD901 100 Collector-emitter saturation voltage IC=3A ,IB=12mA 2.5 V Base-emitter on voltage IC=3A ; VCE=3V 2.5 V VCB=45V, IE=0 TC=100℃ VCB=60V, IE=0 TC=100℃ VCB=80V, IE=0 TC=100℃ VCB=100V, IE=0 TC=100℃ 0.2 2.0 BD897 Collector cut-off current BD899 BD901 ICEO TYP. 45 BD897 BD895 ICBO MIN BD895 VCE=30V, IB=0 BD897 VCE=30V, IB=0 BD899 VCE=40V, IB=0 BD901 VCE=50V, IB=0 0.2 2.0 0.2 2.0 0.2 2.0 Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=3A ; VCE=3V VEC Diode forward voltage IE=8A ton Turn-on time toff Turn-off time IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10Ω;tp=20μs mA 0.5 mA 2 mA 3.5 V 750 1 μs 5 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.79 ℃/W Inchange Semiconductor Product Specification BD895/897/899/901 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3