isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD944/946/948 DESCRIPTION ·DC Current Gain: hFE= 85(Min)@ IC= -500mA ·Complement to Type BD943/945/947 APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD944 -22 BD946 -32 BD948 -45 BD944 -22 BD946 -32 BD948 -45 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 3.12 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD944/946/948 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD944 VCEO(SUS) Collector-Emitter Sustaining Voltage BD946 VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage ICEO IC= -100mA ; IB= 0 -45 -0.5 BD948 IC= -3A; IB= -0.3A -0.7 BD944/946 IC= -2A; VCE= -1V -1.1 B V B V IC= -3A; VCE= -1V -1.3 VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ -0.05 -1 mA -0.1 mA -0.2 mA BD944 VCE= -15V; IB= 0 BD946 VCE= -20V; IB= 0 BD948 VCE= -25V; IB= 0 B B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -10mA ; VCE= -5V 25 hFE-2 DC Current Gain IC= -500mA ; VCE= -1V 85 BD944/946 hFE-3 UNIT V -32 IC= -2A; IB= -0.2A Collector Cutoff Current Collector Cutoff Current MAX BD944/946 BD948 ICBO TYP. -22 BD948 VCE(sat) MIN DC Current Gain 475 50 IC= -2A ; VCE= -1V BD948 40 hFE-4 DC Current Gain--Only For BD948 IC= -3A ; VCE= -1V 30 fT Current-Gain—Bandwidth Product IC= -250mA ; VCE= -1V 3 isc Website：www.iscsemi.cn 2 MHz