KSD5703 KSD5703 High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • High Collector-Base Voltage : VCBO=1500V • High Switching Speed tF = 0.3µs (Max.) • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 IC Collector Current (DC) 10 V A ICP Collector Current (Pulse) 30 A PC Collector Dissipation (TC=25°C) 70 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 1400V, VBE=0 Min. Typ. Max. 1 Units mA 10 µA 1 mA ICBO Collector Cut-off Current VCB = 800V, IE = 0 IEBO Emitter Cut-off Current VEB = 4V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 1.6A 5 V VBE(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 1.6A 1.5 V tF Fall Time VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.3 µs ©2000 Fairchild Semiconductor International 15 5.3 40 7.3 0.1 Rev. A, February 2000 KSD5703 Typical Characteristics 10 100 8 6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 5V IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 0.8A IB = 0.6A 4 IB = 0.4A IB = 0.2A 2 10 0 0 2 4 6 8 1 0.1 10 1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC = 5IB 1 IC = 3IB 0.1 1 6 4 2 0 0.0 10 0.2 0.4 Icp /IB = 5 fH = 15.75kHz o TC = 25 C 8 IC = 5.0A IC = 5.5A 6 0.6 tF 4 0.4 IC = 5.5A 0.2 IC = 4.5A 0.0 0.0 2 IC = 5.0A 0 0.4 0.8 1.2 1.6 2.0 dIB/dt[A/µs], BASE CURRENT GRADIENT Figure 5. Switching Time ©2000 Fairchild Semiconductor International 2.4 tF [µs], COLLECTOR CURRENT FALL TIME 10 1.0 IC = 4.5A 1.0 1.2 1.4 1.6 1.8 2.0 Figure 4. Base-Emitter On Voltage tSTG [µs], STORAGE TIME tF [µs], COLLECTOR CURRENT FALL TIME Figure 3. Collector-Emitter Saturation Voltage tSTG 0.8 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT 0.8 0.6 5 0.8 IC = 5.5A IC = 5.0A 4 0.6 IC = 4.5A tSTG 3 0.4 2 0.2 IC = 5.5A IC = 5.0A IC = 4.5A tF tSTG [µs], STORAGE TIME 0.01 0.1 8 IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE VCE = 5V 1 0.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 IB1[A], BASE CURRENT Figure 6. Switching Time Rev. A, February 2000 KSD5703 Typical Characteristics (Continued) 100 s IC[A], COLLECTOR CURRENT µ 100 0 30 IC MAX 10 µs m 10 s 1m s IC[A], COLLECTOR CURRENT 100 DC 1 0.1 SINGLE PULSE 10 IB2 = -1A CONSTANT 1 IC = 5IB1 = 5IB2 L = 500µ H SINGLE PULSE o TC = 25 C 0.01 0.1 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Safe Operating Area Figure 8. Reverse Bias Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 9. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD5703 Package Demensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E