isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE BDT65 60 BDT65A 80 BDT65B 100 BDT65C 120 BDT65 60 BDT65A 80 BDT65B 100 BDT65C 120 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1 ℃/W isc Website：www.iscsemi.cn BDT65/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT65 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT 60 BDT65A 80 IC= 30mA ;IB=0 V B BDT65B 100 BDT65C 120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V 2.5 V VECF-1 C-E Diode Forward Voltage IF= 5A 2.0 V VECF-2 C-E Diode Forward Voltage IF= 12A ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 0.2 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ 0.4 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 5A ; VCE= 4V hFE-3 DC Current Gain IC= 12A ; VCE= 4V 1000 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1MHz 200 B 2.0 V 1500 1000 pF Switching times ton Turn-On Time toff Turn-Off Time isc Website：www.iscsemi.cn IC= 5A; IB1= -IB2= 20mA; VCC= 30V 2 1 2.5 μs 6.0 10 μs