Inchange Semiconductor Product Specification BDW47 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BDW42 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For general purpose and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -15 A IB Base current -0.5 A PD Total power dissipation 85 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.47 ℃/W Inchange Semiconductor Product Specification BDW47 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA, IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-10mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-50mA -3.0 V VBE Base-emitter on voltage IC=-10A ; VCE=-4V -3.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -1.0 mA ICEO Collector cut-off current VCE=-50V, IB=0 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 1000 hFE-2 DC current gain IC=-10A ; VCE=-4V 250 fT Transition frequency IC=-3A ; VCE=-3V;f=1MHz 4.0 COB Output capacitance IE=0 ; VCB=-10V;f=0.1MHz 2 MIN TYP. MAX -100 UNIT V MHz 300 pF Inchange Semiconductor Product Specification BDW47 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3