Inchange Semiconductor Product Specification BDX54/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON ・Complement to type BDX53/A/B/C APPLICATIONS ・Power linear and switching applications ・Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BDX54 Collector-base voltage -60 Open emitter -80 BDX54C -100 BDX54 -45 Collector-emitter voltage VEBO Emitter-base voltage IC V BDX54B BDX54A VCEO UNIT -45 BDX54A VCBO VALUE -60 Open base V BDX54B -80 BDX54C -100 Open collector -5 V Collector current-DC -8 A ICM Collector current-Pulse -12 A IB Base current -0.2 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.08 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BDX54/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX54 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -45 BDX54A -60 IC=-0.1A, IB=0 V BDX54B -80 BDX54C -100 VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-12mA -2.0 V VBE sat Base-emitter saturation voltage IC=-3A ,IB=-12mA -2.5 V -0.2 mA -0.5 mA -2 mA -2.5 V ICBO ICEO BDX54 VCB=-45V, IE=0 BDX54A VCB=-60V, IE=0 BDX54B VCB=-80V, IE=0 BDX54C VCB=-100V, IE=0 BDX54 VCE=-22V, IB=0 BDX54A VCE=-30V, IB=0 BDX54B VCE=-40V, IB=0 BDX54C VCE=-50V, IB=0 Collector cut-off current Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-3A ; VCE=-3V VF-1 Forward diode voltage IF=-3A -1.8 VF-2 Forward diode voltage IF=-8A -2.5 2 750 V Inchange Semiconductor Product Specification BDX54/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3