Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BDY57 VCBO Collector-base voltage 80 Open base BDY58 VEBO Emitter-base voltage V 160 BDY57 Collector-emitter voltage UNIT 120 Open emitter BDY58 VCEO VALUE V 125 Open collector 10 V IC Collector current 25 A IB Base current 6 A PT Total power dissipation 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDY57 VCEO(SUS) V(BR)CBO Collector-emitter sustaining voltage MIN TYP. MAX 80 IC=0.1A ; IB=0 V BDY58 125 BDY57 120 Collector-emitter breakdown voltage UNIT IC=5mA ; IE=0 BDY58 V 160 VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 1.4 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.4 V ICBO Collector cut-off current VCB=100V; IE=0 0.5 mA ICER Collector cut-off current VCE=80V; RBE=10Ω;TC=100℃ 10 mA IEBO Emitter cut-off current VEB=10V; IC=0 0.5 mA hFE-1 DC current gain IC=10A ; VCE=4V hFE-2 DC current gain IC=20A ; VCE=4V fT Transition frequency IC=1A ; VCE=15V,f=10MHz ton Turn-on time IC=15A ;IB=1.5A 2 20 60 15 10 MHz 1.0 μs Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3