isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY76 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain: hFE= 40~120@IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEX Collector-Emitter Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.17 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY76 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 200mA; RBE=100Ω 70 V V(BR)CEX Collector-Emitter Breakdown Voltage IC= 200mA; VBE(off)= 1.5V 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.4 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 2.2 V ICEO Collector Cutoff Current VCE= 50V; IB= 0 10 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ 5.0 10 mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 30V; IE= 0,TC=150℃ 5.0 10 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE DC Current Gain IC= 10A; VCE= 4V 40 Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 0.8 fT isc Website：www.iscsemi.cn CONDITIONS MIN B 2 MAX UNIT 120 MHz