isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY92 DESCRIPTION ·High DC Current Gain: hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEV Collector-Emitter Voltage VBE= -1.5V 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC≤25℃ 60 W TJ Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY92 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB=80V; IE=0 1.0 mA ICEV Collector Cutoff Current VCE=80V;VBE=-1.5V VCE=80V;VBE=-1.5V;TC=150℃ 1.0 3.0 mA IEBO Emitter Cutoff current VEB=6V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 30 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 30 hFE-3 DC Current Gain IC= 10A ; VCE= 5V 20 Current-Gain—Bandwidth Product IC= 0.5 A;VCE= 5V;ftest = 5MHz fT CONDITIONS MIN TYP MAX 80 UNIT V B B 120 70 MHz Switching Times ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1= -IB2= 0.5A, VCC=30V 0.35 μs 1.3 μs 0.2 μs