isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU134 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 350V(Min.) ·Collector Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching APPLICATIONS ·Designed for use in color TV receiver’s chopper supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC= 25℃ 85 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU134 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V 1.5 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V 30 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 10 Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz Fall Time IC= 3A; IB1= -IB2= 0.6A fT COB tf isc Website：www.iscsemi.cn CONDITIONS MIN TYP. 350 UNIT V B B 2 MAX 120 MHz 120 pF 1.0 μs