Inchange Semiconductor Product Specification BU323AP Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·DARLINGTON ·Low collector saturation voltage APPLICATIONS ·Designed for automotive ignition,switching regulator and motor control applications. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCEO(SUS) Collector-emitter voltage Open base 400 V VCEV Collector-emitter voltage Open base 475 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 16 A IB Base current 3 A PD Total power dissipation 125 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BU323AP Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=10mH 400 V VCER(SUS) Collector-emitter sustaining voltage IC=3A; RBE=100Ω;L=500μH 475 V VCEsat-1 Collector-emitter saturation voltage IC=3 A;IB=60mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=6A;IB=120m A 1.7 V VCEsat-3 Collector-emitter saturation voltage IC=10A;IB=300m A 2.7 V VBEsat-1 Base-emitter saturation voltage IC=6A;IB=120m A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=10A;IB=300m A 3 V ICER Collector cut-off current VCE=Rated;VBE=100Ω 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 40 mA ICBO Collector cut-off current VCB=Rated; IE=0 1 mA hFE-1 DC current gain IC=3A ; VCE=6V 300 550 hFE-2 DC current gain IC=6A ; VCE=6V 150 350 hFE-3 DC current gain IC=10A ; VCE=6V 50 150 VBE Base-emitter on voltage IC=10A ; VCE=6V VF Diode forward voltage IF=10A Output capacitance Cob TYP. MAX UNIT 2000 2.5 V 2 3.5 V VCB=10V,IE=0;fT=100kHz 165 350 pF IC=6A ; IB1=IB2=0.3A VCC=12V ; 7.5 15 μs 5.2 15 μs Switching times ts Storage time tf Fall time 2 Inchange Semiconductor Product Specification BU323AP Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3