isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406H DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed: tf= 400ns(Max.) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2.08 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE=250V; VBE= 0 VCE=250V; VBE= 0;TC= 150℃ 5.0 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 5A; IB1= -IB2= 0.8A isc Website：www.iscsemi.cn CONDITIONS MIN MAX 200 B B 2 TYP. UNIT V 10 MHz 0.4 μs