Inchange Semiconductor Product Specification BU500 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・Designed for use in large screen color deflection circuits. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICM Collector current-peak 16 A IB Base current 4 A PT Total power dissipation 75 W Tj Junction temperature -65~150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.66 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BU500 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A; IB=0;L=10mH V(BR)EBO Emitter-base breakdown voltage IE=100mA; IC=0 Collector-emitter saturation voltage IC=4.5A;IB=2A 1.0 V VBE Base-emitter on voltage IC=4.5A;VCE=5V 1.3 V ICBO Collector cut-off current VCE=1000V;VBE=-2V 0.02 mA ICEX Collector cut-off current VCE=1500V;VBE=-2V 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 10 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=5V VCEsat CONDITIONS MIN TYP. MAX UNIT 700 V 5 V 8 36 3.0 Switching times ts Storage time 1.2 μs 1.0 μs IC=4.5A ;IB1=-IB2=1.5A VCC=100V ; tf Fall time 2 Inchange Semiconductor Product Specification BU500 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3