ISC BU536

Inchange Semiconductor
Product Specification
BU536
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage
・Fast switching speed
APPLICATIONS
・For color TV horizontal deflection circuits.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1100
V
VCEO
Collector-emitter voltage
Open base
480
V
VEBO
Emitter-base voltage
Open collector
7
V
8
A
IC
Collector current
ICM
Collector current-peak
tp<5ms
15
A
PT
Total power dissipation
TC=25℃
62
W
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-65~175
℃
MAX
UNIT
1.0
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BU536
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0;
480
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0;
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A;IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=1100V;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V;IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
hFE-2
DC current gain
IC=4A ; VCE=5V
5.5
2
Inchange Semiconductor
Product Specification
BU536
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3