ISC BU706DF

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU706DF
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min)
·High Switching Speed
·Built-in Integrated Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers and line operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage VBE=0
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
3
A
IBM
Base Current-Peak
5
A
PC
Collector Power Dissipation
@ TC=25℃
32
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
Rth j-a
Thermal Resistance, Junction to Ambient
isc Website:www.iscsemi.cn
MAX
UNIT
3.95
℃/W
35
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU706DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A ;IB= 0; L=25 mH
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 1.33A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 1.33A
1.3
V
ICES
Collector Cutoff Current
VCE= VCESmax;VBE= 0
VCE= VCESmax;VBE= 0; TJ= 125℃
0.5
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
10
mA
hFE
DC Current Gain
IC= 3A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 3A
2.2
V
IS/B
Second Breakdown Current
VCE= 300V; tp= 200μs
B
700
UNIT
V
B
B
2.25
1.5
1.0
A
Switching Times
tf
Fall Time
0.7
μs
6.5
μs
IC= 3A; IB(end)= 1A; LB= 12μH
ts
Storage Time
isc Website:www.iscsemi.cn
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