isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU808 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in three-phase AC motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ 160 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.78 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU808 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;IB= 0; L=25 mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 9A; IB= 4A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 6A 3 V Base-Emitter Saturation Voltage IC= 9A; IB= 4A 1.5 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 1 4 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 mA hFE DC Current Gain IC= 1A; VCE= 5V IS/B Second Breakdown Current VCE= 100V; tp= 1 s COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V, ftest= 5MHz VBE(sat) fT B 700 UNIT V B B 8 0.4 A 200 pF 7 MHz 1.5 μs 4.5 μs 0.5 μs Switching Times ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 9A; IB1= -IB2= 4A 2