isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL1203E DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL1203E ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0, L= 25mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 0.7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A; IB= 1A 1.5 V ICES Collector Cutoff Current VCE= 1200V; VBE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 550V; IB= 0 0.1 mA hFE-1 DC Current Gain IC= 1mA; VCE= 5V 10 hFE-2 DC Current Gain IC= 10mA; VCE= 5V 10 hFE-3 DC Current Gain IC= 0.8A; VCE= 3V 14 32 hFE-4 DC Current Gain IC= 2A; VCE= 5V 9 28 550 B B B B B UNIT V Switching Times ;Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2A; IB1= 0.4A; IB2= -0.8A; tp= 30μs; VCC= 150V 0.5 μs 3.0 μs 0.3 μs