Inchange Semiconductor Product Specification BUT18F BUT18AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS BUT18F VCBO Collector-base voltage 400 Open base BUT18AF VEBO Emitter-base voltage V 1000 BUT18F Collector-emitter voltage UNIT 850 Open emitter BUT18AF VCEO VALUE V 450 Open collector 9 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A Ptot Total power dissipation 33 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BUT18F BUT18AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUT18F VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 400 IC=0.1A; IB=0;L=25mH V 450 BUT18AF VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.3 V BUT18F VCE=850V ;VBE=0 Tj=125℃ 1.0 2.0 BUT18AF VCE=1000V ;VBE=0 Tj=125℃ 1.0 2.0 10 ICES Collector cut-off current mA IEBO Emitter cut-off current VEB=9V; IC=0 hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 mA Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=4A; IB1=-IB2=0.8A VCC=250V 2 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUT18F BUT18AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3