isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ13333 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ13333 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB=2A IC= 10A; IB=2A,TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB=6.7A Base-Emitter Saturation Voltage ICEV MIN TYP. MAX 400 UNIT V 1.8 2.4 V 5 V IC= 10A; IB= 2A IC= 10A; IB= 2A,TC=100℃ 1.8 1.8 V Collector Cutoff Current VCEV=400V;VBE(off)=1.5V VCEV=400V;VBE(off)=1.5V;TC=150℃ 0.25 5.0 mA ICER Collector Cutoff Current VCE= 400V; RBE= 50Ω,TC= 100℃ 5.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1 mA hFE DC Current Gain IC= 5A ; VCE= 5V 10 60 Current Gain-Bandwidth Product IC= 0.3A ;VCE= 10V; ftest=1MHz 5 40 MHz Output Capacitance IE= 0; VCB= 10V; ftest=1kHz 125 500 pF 0.02 0.1 μs 0.3 0.7 μs 1.6 4.0 μs 0.3 0.7 μs VBE(sat) fT COB Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 10A , VCC= 250V; IB1=2A VBE(off)= 5V; tp= 10μs; Duty Cycle≤2.0% 2