FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications • • • • High Speed Switching Low Saturation Voltage: VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance C G G C E TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL E TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA50N100BNTD 1000 ± 25 50 35 100 15 156 63 -55 to +150 -55 to +150 Units V V A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2006 Fairchild Semiconductor Corporation FGA50N100BNTD Rev. A Typ. ---- Max. 0.8 2.4 25 Units °C/W °C/W °C/W www.fairchildsemi.com FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK January 2006 Device Marking Device Package FGA50N100BNTD FGA50N100BNTDTU TO-3P Electrical Characteristics of IGBT Symbol Packaging Type Qty per Tube Rail / Tube 30ea Max Qty per Box - TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 1000 -- -- V --- --- 1.0 ± 500 mA nA 4.0 --- 5.0 1.5 2.5 7.0 1.8 2.9 V V V ---- 6000 260 200 ---- pF pF pF -------- 140 320 630 130 275 45 95 ---250 350 --- ns ns ns ns nC nC nC Typ. 1.2 1.8 1.2 0.05 Max. 1.7 2.1 1.5 2 Units V V us uA Off Characteristics BVCES ICES IGES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = 1000V, VGE = 0V VGE = ± 25, VCE = 0V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 60A, RG = 51Ω, VGE=15V, Resistive Load, TC = 25°C VCE = 600 V, IC = 60A, VGE = 15V , , TC = 25°C Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr IR Diode Reverse Recovery Time Instantaneous Reverse Current = 25°C unless otherwise noted Test Conditions IF = 15A IF = 60A IF = 60A di/dt = 20 A/us VRRM = 1000V Min. ---- www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Package Marking and Ordering Information 80 90 20V 15V 10V 9V 8V o 60 40 7V 20 1 2 3 4 Tc = 25 C o Tc = 125 C 70 60 50 40 30 20 10 VGE = 6V 0 0 Common Emitter VGE = 15V 80 Collector Current, I C [A] Collector Current, I C [A] Common Emitter o TC = 25 C 0 5 0 Collector-Emitter Voltage, VCE [V] 1 2 3 4 Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Common Emitter O TC= - 40 C 3 Collector-Emitter Voltage, VCE[V] Collector-Emitter Voltage, VCE [V] 10 Common Emitter VGE=15V 80A 60A 2 30A IC=10A 1 -50 0 50 100 8 6 30A 4 60A 80A 2 IC=10A 0 150 4 o Case Temperature, TC [ C] Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level 8 6 30A 60A 80A 2 IC = 10A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE 16 10 Common Emitter o TC = 25 C 4 12 20 Fig 4. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 10 8 Gate-Emitter Voltage, VGE [V] 20 Common Emitter o TC = 125 C 8 30A 6 60A 80A 4 2 IC = 10A 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK 100 FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK 10000 10000 Cies V CC =600V, IC =60A V GE = +/-15V Coes 100 Cres Common Emitter VGE = 0V, f = 1MHz Switching Time [ns] Capacitance [pF] o T C =25 C 1000 Tdoff 1000 Tr T don Tf 100 o TC = 25 C 0 5 10 15 20 25 10 30 0 50 100 Collector-Emitter Voltage, VCE [V] Fig 7. Capacitance Characteristics 20 Common Emitter VCC=600V, RL=10 Ω V CC= 6 0 0 V , R g = 5 1 Ω o TC=25 C o Gate-Emitter Voltage,VGE [V] V G E = + /-1 5 V , T C = 2 5 C Switching Time [ns] 200 Fig 8. Switching Characteristics vs. Gate Resistance 1000 T d o ff Tf Tr 100 150 Gate Resistance, R G [Ω ] T don 15 10 5 0 10 20 30 40 50 0 60 50 100 150 200 250 300 Gate Charge, Qg [nC] C o lle cto r C urre nt, IC [A ] Fig 9. Switching Characteristics vs. Collector Current Fig 10. Gate Charge Characteristics 1 100 0.5 Ic MAX (Pulsed) Ic MAX (Continuous) 0.2 Thermal Response [Zthjc] Collector Current, Ic [A] 50 µ s 100 µ s 10 1ms DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 1 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E-5 10 100 Collector - Emitter Voltage, V CE [V] Fig 11. SOA Characteristics 1000 singlepulse 1E-4 1E-3 0.01 0.1 1 10 Rectangular PulseDuration[sec] Fig 12. Transient Thermal Impedance of IGBT www.fairchildsemi.com FGA50N100BNTD Rev. A 120 IF= 60 A Forward Current, IF[A] o T C = 100 C 10 o T C = 25 C 1 0.1 0.0 0.5 1.0 1.5 2.0 1.0 0.8 80 trr 0.6 60 0.4 40 0.2 0 40 Forward Voltage, V FM [V] 160 200 0 240 8 Irr 0.6 6 0.4 4 1000 100 Reverse Current, IR [uA] Reverse Recovery Time, trr [us] 10 Reverse Recovery Current Irr [A] 12 trr 0.8 120 Fig 14. Reverse Recovery Characteristics vs. di/dt di/dt=-20A/us o TC=25 C 1.0 80 di/dt [A/us] Fig 13. Forward Characteristics 1.2 20 Irr 0.0 2.5 100 Reverse Recovery Current Irr [A] Reverse Recovery Time, trr [us] o TC= 25 C o T C = 150 C 10 1 0.1 o T C= 25 C 0.01 1E-3 10 20 30 40 50 60 0 Forward Current, IF [A] 300 600 900 Reverse Voltage, V R [V] Fig 15. Reverse Recovery Characteristics vs. Forward Current 250 Fig 16. Reverse Current vs. Reverse Voltage o TC = 25 C Capacitance, Cj [pF] 200 150 100 50 0 0.1 1 10 100 Reverse Voltage, VR [V] Fig 17. Junction capacitance www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK 1.2 100 TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Package Dimension The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 www.fairchildsemi.com FGA50N100BNTD Rev. A FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK TRADEMARKS