isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJ450 DESCRIPTION ·Low Saturation Voltage: VCE(sat) =-1V@IC=-10Adc ·DC Current Gain: hFE=20(Min)@ IC=-10A APPLICATIONS ·Designed for high-current switching and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -30 A IB Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJ450 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-200mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=-10A; IB=-1A -1 V VBE(sat) Base-Emitter Saturation Voltage IC=-10A; IB=-1A -1.5 V ICBO Collector Cutoff Current VCE=-40V; IE= 0 -1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 mA hFE DC Current Gain IC=-10A ; VCE=-2V 20 Current Gain-Bandwidth Product IC= -1A ;VCE=-10V; ftest=1MHz 2 fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX -40 UNIT V