ISC MJ802

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ802
DESCRIPTION
·High DC Current Gain: hFE= [email protected]= 7.5A
·Excellent Safe Operating Area
·Complement to Type MJ4502
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power [email protected]=25℃
200
W
TJ
Junction Temperature
150
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ802
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=0.2A ;IB=0
VCE(sat)
Collector-Emitter Saturation Voltage
IC=7.5A; IB=0.75A
0.8
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=7.5A; IB=0.75A
1.3
V
VBE(on)
Base-Emitter On Voltage
IC=7.5A ; VCE=2V
1.3
V
ICBO
Collector Cutoff Current
VCB=100V; IE=0
VCB=100V; IE=0;TC=150℃
1.0
5.0
mA
IEBO
Emitter Cutoff current
VEB=4V; IC=0
1.0
mA
hFE
DC Current Gain
IC=7.5A ; VCE=2V
25
Current-Gain—Bandwidth Product
IC=1A;VCE=10V;f=1.0MHz
2.0
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP
MAX
90
UNIT
V
100
MHz
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Website:www.iscsemi.cn
isc Product Specification
MJ802